Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation
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ArticleDescription: 1 archivo (1,9 MB)Subject(s): Online resources: Summary: In this paper, a theoretical study of the electrical parameters degradation of different n-type GaAs sub-cells for InGaP/GaAs/Ge triple junction solar cells irradiated with 1 and 5 MeV electrons has been performed by means of computer simulation. Effects of base carrier concentration upon the maximum power point, short-circuit current, open circuit voltage, diffusion current, recombination current and series resistance of these devices have been researched using the displacement damage dose method, the one-dimensional PC1D device modeling program and a home-made numerical code based on genetic algorithms. The radiative recombination lifetime, damage constant for minority-carrier lifetime and carrier removal rate models for GaAs sub-cells have been used in the simulations. An analytical model has been proposed, which is useful to describe the radiation-induced degradation of diffusion current, recombination current and series resistance. Results obtained in this work can be used to predict the radiation resistance of solar cells over a wide range of energies.
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Biblioteca de la Facultad de Informática | Biblioteca digital | A0909 (Browse shelf(Opens below)) | Link to resource | No corresponde |
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In this paper, a theoretical study of the electrical parameters degradation of different n-type GaAs sub-cells for InGaP/GaAs/Ge triple junction solar cells irradiated with 1 and 5 MeV electrons has been performed by means of computer simulation. Effects of base carrier concentration upon the maximum power point, short-circuit current, open circuit voltage, diffusion current, recombination current and series resistance of these devices have been researched using the displacement damage dose method, the one-dimensional PC1D device modeling program and a home-made numerical code based on genetic algorithms. The radiative recombination lifetime, damage constant for minority-carrier lifetime and carrier removal rate models for GaAs sub-cells have been used in the simulations. An analytical model has been proposed, which is useful to describe the radiation-induced degradation of diffusion current, recombination current and series resistance. Results obtained in this work can be used to predict the radiation resistance of solar cells over a wide range of energies.
Semiconductor Science and Technology, 31(11), pp. 1-8.